Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
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چکیده
منابع مشابه
Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
E. Starikov, P. Shiktorov, V. Gružinskis, L. Varani, J.C. Vaissière, C. Palermo and L. Reggiani Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania CEM2 — Centre d’Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France INFM — National Nanotechnology Laboratory, Dipartimento di Ingegneria dell’Inn...
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15 صفحه اولMonte Carlo Simulation of Electron Energy Loss Spectra of Group III-Nitride Nanoscale Semiconductors
Group III-nitride semiconductors are a main research interest in the optoelectronics because of their unique physical and electronic properties [1]. The thin layers of these semiconductors at the nanoscale are now very common in the modern devices. Hence, proper materials characterizations with high spatial and compositional resolution such as electron energy loss spectroscopy (EELS) are essent...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2005
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.107.408